Appeal No. 2003-1971
Application No. 09/489,970
the contacts for the source and drain regions. See page 1 of
Appellants' specification.
Referring now to specifically Figure 4, there is shown a
cross section of a partially completed gate electrode 40 on a
substrate 10. See page 15 of Appellants' specification. Figure
5 shows a cross section of a gate electrode 40 whereby gate
spacers of oxide (42) have been created. The layer 42 forms the
first layer of a double layer gate spacer on the side walls of
the partially completed gate of electrode 40. See page 16 of
Appellants' specification. Figure 6 shows a cross section of the
gate electrode after the second layer 44 of silicon nitride has
been created to form the second layer of the gate spacers. See
pages 17 and 18 of Appellants' specification. Figure 7 shows a
cross section of the gate electrode after the source 52 and drain
54 are implanted into the surface of substrate 10. See page 19
of Appellants' specification. Figure 8 shows a cross section of
the gate electrode after the layer 46 of the cobalt has been
deposited over the surface of the structure 40. See page 19 of
Appellants' specification. Figure 9 shows the siliciding of the
layer of cobalt creating reacted layers 56, 58 and 60 and
unreacted layer 46 of cobalt. See page 20 of Appellants'
specification. Figure 10 shows a cross section of the gate
22
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