Appeal No. 2004-0651
Application No. 09/898,082
subjected to chemical mechanical polishing (CMP), by forming a
structure as recited in representative independent claim 1,
reproduced as follows:
1. A semiconductor device comprising:
a first portion comprising a first substrate, a conductive
layer and an insulating layer laminated on the first substrate
and a bonding surface that is chemically mechanically polished
and exposes a conductive region and an insulating region, wherein
the conductive region includes a concave surface defining a
dishing portion;
a second portion comprising a second substrate, a conductive
layer and an insulating layer laminated on the second substrate
and a bonding surface that is chemically mechanically polished
and exposes at least a conductive region having a concave surface
defining a dishing portion; and wherein
the bonding surface of the first portion and the bonding
surface of the second portion are solid-state-bonded to each
other so that the dishing portions of the conductive regions of
the respective first and second portions are bonded to each other
so as to contact one another; and
at least one of the bonding surface of the first portion and
the bonding surface of the second portion has the insulating
region lowered with respect to the conductive region.
The examiner relies on the following reference:
Kawai et al. (Kawai) 5,939,789 Aug. 17, 1999
Claims 1, 3-9 and 20-24 stand rejected under 35 U.S.C.
§ 102(b) as anticipated by Kawai.
Reference is made to the briefs and answer for the
respective positions of appellant and the examiner.
-2-
Page: Previous 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Next
Last modified: November 3, 2007