Ex Parte Hopper et al - Page 1




            The opinion in support of the decision being entered today was not written
                   for publication and is not binding precedent of the Board.         

                                                                 Paper No. 19         

                       UNITED STATES PATENT AND TRADEMARK OFFICE                      
                                     ____________                                     
                          BEFORE THE BOARD OF PATENT APPEALS                          
                                   AND INTERFERENCES                                  
                                     ____________                                     
                Ex parte DAWN M. HOPPER, MINH V. NGO, and MARK S. CHANG               
                                     ____________                                     
                                 Appeal No. 2004-0660                                 
                              Application No. 10/120,116                              
                                     ____________                                     
                                       ON BRIEF                                       
                                     ____________                                     
          Before GARRIS, WARREN, and MOORE, Administrative Patent Judges.             
          GARRIS, Administrative Patent Judge.                                        


                                  DECISION ON APPEAL                                  
               This is a decision on an appeal from the final rejection of            
          claims 1-11.  The only other claims remaining in the application,           
          which are claims 12-18, stand withdrawn from further consideration          
          by the Examiner.                                                            
               The subject matter on appeal relates to a method for filling           
          isolation trenches during a semiconductor fabrication process by            
          depositing a silicon-rich liner onto the isolation trenches and             
          filling the isolation trenches with an oxide utilizing a biased             
          high density plasma deposition process.  This appealed subject              







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