The opinion in support of the decision being entered today was not
written for publication and is not binding precedent of the Board
Paper No. 18
UNITED STATES PATENT AND TRADEMARK OFFICE
_____________
BEFORE THE BOARD OF PATENT APPEALS
AND INTERFERENCES
_____________
Ex parte PING-CHIH CHANG,
ALBERT G. BACA, NEIN-YI LI,
HONG Q. HOU and CAROL I. H. ASHBY
______________
Appeal No. 2004-0682
Application 09/547,152
______________
ON BRIEF
_______________
Before GARRIS, DELMENDO, and PAWLIKOWSKI, Administrative Patent
Judges.
PAWLIKOWSKI, Administrative Patent Judge.
DECISION ON APPEAL
This is a decision on appeal under 35 U.S.C. § 134 from the
examiner’s final rejection of claims 1-4, 7, 8, 15-17, and 19-24.
Claim 1 is representative of the subject matter on appeal
and is set forth below:
1. An NPN double-heterojunction bipolar transistor formed
on a gallium arsenide (GaAs) substrate and comprising:
(a) a base region further comprising a layer of p-type-doped
indium gallium arsenide nitride (InGaAsN);
(b) an emitter region located on one side of the base region
and further comprising a layer of a first n-type-doped semi-
conductor having a bandgap energy greater than the bandgap energy
of the InGaAsN base region;
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