Ex Parte Chang et al - Page 1




            The opinion in support of the decision being entered today was not        
            written for publication and is not binding precedent of the Board         

                                                            Paper No.  18             

                      UNITED STATES PATENT AND TRADEMARK OFFICE                       
                                    _____________                                     
                         BEFORE THE BOARD OF PATENT APPEALS                           
                                 AND INTERFERENCES                                    
                                    _____________                                     
                              Ex parte PING-CHIH CHANG,                               
                             ALBERT G. BACA, NEIN-YI LI,                              
                          HONG Q. HOU and CAROL I. H. ASHBY                           
                                   ______________                                     
                                Appeal No. 2004-0682                                  
                               Application 09/547,152                                 
                                   ______________                                     
                                      ON BRIEF                                        
                                   _______________                                    

          Before GARRIS, DELMENDO, and PAWLIKOWSKI, Administrative Patent             
          Judges.                                                                     
          PAWLIKOWSKI, Administrative Patent Judge.                                   

                                 DECISION ON APPEAL                                   
               This is a decision on appeal under 35 U.S.C. § 134 from the            
          examiner’s final rejection of claims 1-4, 7, 8, 15-17, and 19-24.           
              Claim 1 is representative of the subject matter on appeal              
          and is set forth below:                                                     
               1.   An NPN double-heterojunction bipolar transistor formed            
          on a gallium arsenide (GaAs) substrate and comprising:                      
               (a) a base region further comprising a layer of p-type-doped           
          indium gallium arsenide nitride (InGaAsN);                                  
               (b) an emitter region located on one side of the base region           
          and further comprising a layer of a first n-type-doped semi-                
          conductor having a bandgap energy greater than the bandgap energy           
          of the InGaAsN base region;                                                 







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