Appeal No. 2004-0682
Application No. 09/547,152
(c) a collector region located on the other side of the base
region and further comprising a layer of a second n-type-doped
semiconductor having a bandgap energy greater than or equal to
the bandgap energy of the InGaAsN base region; and
(d) electrode forming separate electrical connections to
each of the collector, emitter and base regions of the
transistor.
We use the answer of Paper No. 16, mailed June 4, 2003.
The examiner relies upon the following art references as
evidence of unpatentability:
Liu et al. (Liu) 6,031,256 Feb. 29, 2000
Yagura et al. (Yagura) 6,188,137 Feb. 13, 2001
Matsuno et al. (Matsuno)
(Japanese) JP40505095 Mar. 26,
1993
Xin et al. (Xin), “Annealing behavior of p-type Ga0.892In0.108NxAs1-
x(0 ≤ x ≤ 0.24)Grown by gas-source molecular beam epitaxy,”
Applied Physics Letters, Vol. 75, No. 10, pages 1416-1418 (July
1999).
Claims 1-4, 7, 8, 19, 21, and 22 stand rejected under
35 U.S.C. § 103 as being unpatentable over Liu in view of Xin.
Claims 15, 16, 17, and 20 stand rejected under 35 U.S.C.
§ 103 as being unpatentable over Liu and Xin and further in view
of Yagura.
Claims 23 and 24 stand rejected under 35 U.S.C. § 103 as
being unpatentable over Liu and Xin and further in view of
Matsuno.
OPINION
For the reasons set forth in the brief, and below, we
reverse each of the rejections.
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