Appeal No. 2005-0293
Application No. 09/727,139
treatment to selectively form a first metal silicide
layer on the bottom portion of the groove portion;
removing the first metal film other than a portion
which has been converted to the first metal silicide
layer after the step of reacting the silicon film and
the first metal film; forming a second insulating film
on the first metal silicide layer to form one of a
wiring and an electrode which is covered with the
first and the second insulating film; forming a
contact hole in the third insulating film in self-
alignment with the first and the second insulating
film; and filling a conductive material in the contact
hole.
The step of forming the groove portion and the
third insulating film may include the steps of forming
the silicon film on the main surface of the
semiconductor substrate on which a gate insulating
film is formed; processing the silicon film into a
desired pattern; forming the first insulating film on
a side surface of the silicon film which has been
processed into the desired pattern; forming the third
insulating film on an entire portion of the main
surface of the semiconductor substrate; making the
third insulating film flat until an upper surface of
the silicon film is exposed; and removing the silicon
film by a preset thickness to form the groove portion
surrounded by the first insulating film.
It is preferable to further include a step of
making the silicon film flat between the step of
forming the silicon film and the step of processing
the silicon film into the desired pattern.
The step of forming the groove portion and the
third insulating film may include the steps of forming
the silicon film on the main surface of the
semiconductor substrate on which a gate insulating
film is formed; forming a dummy film on the silicon
film; processing the silicon film and the dummy film
into a desired pattern; forming the first insulating
film on side surfaces of the silicon film and the
dummy film which have been processed into the desired
pattern; forming the third insulating film on the main
surface of the semiconductor substrate; making the
third insulating film flat until an upper surface of
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