Appeal No. 2005-0822
Application No. 09/825,612
details of this appealed subject matter are recited in
representative claims 13 through 16, 22, 24, 25, and 28
reproduced below:
13. A method of making a semiconductor device,
comprising the steps of:
forming a product in a PECVD[1] chamber through an
interaction of a chemically inert charged species
producer gas and a metal-containing compound in a
plasma; and
exposing a substrate to said product.
14. The method in claim 13, wherein said step of
forming a product comprises forming a product free of
constituents of said chemically inert charged species
producer gas.
15. The method in claim 14, wherein said step of
exposing a substrate to said product further comprises
forming a metal layer free of constituents of said
chemically inert charged species producer gas.
16. The method in claim 15, wherein said step of
forming a product further comprises forming a metal-
containing ion of said metal-containing compound.
22. A method of performing a back-end-of-the-line
process, comprising:
providing a semiconductor device under
fabrication;
placing said device in a vacuum chamber;
supplying a metal source gas and a chemically
inert-excitation gas within said vacuum chamber; and
interacting said metal source gas and said
chemically inert-excitation gas.
24. A method of making a semiconductor device
using PECVD comprising:
providing a semiconductor device under
fabrication;
placing said device in a vacuum chamber;
1 The present specification (¶¶0003 and 0005) indicates
that “PECVD” denotes plasma enhanced chemical vapor deposition.
2
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