Appeal No. 2005-1256
Application No. 09/988,593
an isolation film <31> provided in an upper layer part of said SOI
layer for isolating said plurality of element forming regions from each
other;
a first conductivity type semiconductor region <11, 12> provided
under said isolation film as part of said SOI layer, said semiconductor
region being formed in contact with at least one of said plurality of element forming
regions having a first conductivity type among said plurality of element forming regions;
and
a first conductivity type body region <10> provided in said SOI layer
and capable of being externally fixed in electric potential, said body region
being in contact with said semiconductor region, wherein
said semiconductor region at least partially has a first conductivity
type impurity region not mixed with an impurity of a second conductivity
type different from said first conductivity type but doped by only an
impurity of said first conductivity type.
The examiner relies on the following reference:
Flaker et al. (Flaker) 6,410,369 Jun. 25, 2002
(filed Jun. 12, 2000)
Claims 1-9 stand rejected under 35 U.S.C. §102 (a) as anticipated by Flaker.
Reference is made to the briefs and answer for the respective positions of
appellants and the examiner.
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