Ex Parte Maeda et al - Page 4




              Appeal No. 2005-1256                                                                                       
              Application No. 09/988,593                                                                                 


                                                 OPINION                                                                 
                     A claim is anticipated only when a single prior art reference expressly or                          
              inherently discloses each and every element or step thereof.  Constant v. Advanced                         
              Micro-Devices Inc., 848 F.2d 1560, 1570, 7 USPQ2d 1057, 1064 (Fed. Cir. 1988); RCA                         
              Corp. v. Applied Digital Data Systems, Inc., 730 F.2d 1440, 1444, 221 USPQ 385, 388                        
              (Fed. Cir. 1984).  If the examiner presents a reasonable basis for alleging inherency, the                 
              burden shifts to appellants to come forward, if they can, with evidence to the contrary.                   
              In re King, 801 F.2d 1324, 1326, 231 USPQ 136, 138 (Fed. Cir. 1986); In re Ludtke, 441                     
              F.2d 660, 664, 169 USPQ 563, 566-67 (CCPA 1971); In re Swinehart, 439 F.2d 210,                            
              213, 169 USPQ 226, 229 (CCPA 1971).                                                                        
                     The examiner asserts that Flaker discloses a semiconductor device having an                         
              SOI structure formed by a semiconductor substrate, an embedded insulating layer 48                         
              and a first conductivity type (p-) SOI layer 46.  The examiner identifies a plurality of                   
              element forming regions 54, each formed with prescribed elements (Figures 8, 10, and                       
              12); an isolation film 40 (Figure 10B) provided in an upper layer part of the SOI layer for                
              isolating the plurality of element forming regions from each other; a first conductivity                   
              type semiconductor region (body link, Figure 10B) provided under the isolation film 40                     
              as part of the SOI layer, with the first conductivity type body link semiconductor region                  





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