Appeal No. 2005-2247
Application No. 09/976,641
BACKGROUND
Appellants’ invention relates to reducing leakage currents in memories with
phase-change material. An understanding of the invention can be derived from a
reading of exemplary claim 11, which is reproduced below.
11. A memory cell comprising:
a substrate;
a phase-change material over said substrate;
a buried line of a first conductivity type formed in said substrate, said
buried line including a more lightly doped region over a more heavily doped
region and a more lightly doped region under said more heavily doped region;
a region of a second conductivity type opposite said first conductivity type
over said line and under said phase-change material; and
a pair of trenches on either side of said buried line extending past said
buried line and said region of a second conductivity type into said substrate
under said buried line.
The prior art references of record relied upon by the examiner in rejecting the
appealed claims are:
Holmberg et al. (Holmberg) 4,599,705 Jul. 08, 1986
Ovshinsky 5,359,205 Oct. 25, 1994
Slotboom et al. (Slotboom) 5,502,326 Mar. 26, 1996
Chang 6,015,995 Jan. 18, 2000
(filed Feb. 27, 1998)
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