Appeal No. 2005-2533
Application No. 09/976,559
forming a radiation absorption layer above a substrate;
forming a wider bandgap layer above the radiation
absorption layer;
forming a passivation layer above the wider bandgap layer;
forming a patterned doping layer above the passivation
layer;
driving dopant from the patterned doping layer into the wider
bandgap layer and the radiation absorption layer to form a doped
region; and
forming an electrical contact to the doped region.
6. A method for forming a radiation detector, comprising
the steps of:
forming a radiation absorption layer above a substrate;
forming a wider bandgap layer above the radiation
absorption layer;
forming a passivation layer above the wider bandgap layer;
forming a doping layer above the passivation layer;
wherein the absorption layer, the wider bandgap layer and
the passivation layer are formed in situ by alternating layers of a
first material and a second material, the composition of the
absorption layer, the wider bandgap layer and the passivation layer
being determined by the relative thickness of the layers of the first
and second materials and, after deposition of the layers of first and
second materials, annealing the first and second materials to
produce an alloy of the first and second materials;
patterning the doping layer;
driving dopant from the patterned doping layer into the wider
bandgap layer and the radiation absorption layer to form a doped
region;
patterning the passivation layer to expose the doped region;
and
forming an electrical contact to the doped region.
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