Ex Parte Sophie et al - Page 1



            The opinion in support of the decision being entered today was not      
            written for publication and is not binding precedent of the Board.      
                     UNITED STATES PATENT AND TRADEMARK OFFICE                      
                                    __________                                      
                         BEFORE THE BOARD OF PATENT APPEALS                         
                                 AND INTERFERENCES                                  
                                    __________                                      
                  Ex parte AUGUSTE J.L. SOPHIE and FUMITOSHI OZAKI                  
                                    __________                                      
                                Appeal No. 2005-1926                                
                             Application No. 10/188,723                             
                                    ___________                                     
                                      ON BRIEF                                      
                                    ___________                                     
         Before WARREN, TIMM, and FRANKLIN, Administrative Patent Judges.           
         FRANKLIN, Administrative Patent Judge.                                     
                                 DECISION ON APPEAL                                 
         This is an appeal under 35 U.S.C. § 134 from the examiner’s                
         final rejection of claims 2-8, 10-12, and 15-17.                           
              Claims 3, 12, and 17 are representative of the subject                
         matter on appeal, and are set forth below:                                 
                   3. A method for depositing a nitrogen-doped silicon              
         carbide(Si-C-N) material on a surface, comprising:                         
              loading a substrate having a surface into a processing                
         chamber;                                                                   
              introducing at least one chemical precursor and a carrier             
         gas into the processing chamber, the carrier gas comprising                
         nitrogen gas; and                                                          
              applying an electromagnetic energy to the at least one                
         chemical precursor and the carrier gas, thereby depositing on              
         the surface of the substrate the Si-C-N material comprising                
         silicon, carbon and nitrogen, wherein substantially all of the             
         nitrogen contained in the deposited material originates from the           
         nitrogen gas.                                                              






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