The opinion in support of the decision being entered today was not
written for publication and is not binding precedent of the Board.
UNITED STATES PATENT AND TRADEMARK OFFICE
__________
BEFORE THE BOARD OF PATENT APPEALS
AND INTERFERENCES
__________
Ex parte AUGUSTE J.L. SOPHIE and FUMITOSHI OZAKI
__________
Appeal No. 2005-1926
Application No. 10/188,723
___________
ON BRIEF
___________
Before WARREN, TIMM, and FRANKLIN, Administrative Patent Judges.
FRANKLIN, Administrative Patent Judge.
DECISION ON APPEAL
This is an appeal under 35 U.S.C. § 134 from the examiner’s
final rejection of claims 2-8, 10-12, and 15-17.
Claims 3, 12, and 17 are representative of the subject
matter on appeal, and are set forth below:
3. A method for depositing a nitrogen-doped silicon
carbide(Si-C-N) material on a surface, comprising:
loading a substrate having a surface into a processing
chamber;
introducing at least one chemical precursor and a carrier
gas into the processing chamber, the carrier gas comprising
nitrogen gas; and
applying an electromagnetic energy to the at least one
chemical precursor and the carrier gas, thereby depositing on
the surface of the substrate the Si-C-N material comprising
silicon, carbon and nitrogen, wherein substantially all of the
nitrogen contained in the deposited material originates from the
nitrogen gas.
Page: 1 2 3 4 5 6 7 8 9 Next
Last modified: November 3, 2007