Appeal No. 2005-1926
Application No. 10/188,723
12. A process for forming a layer comprising silicon
and carbon in integrated circuit fabrication, comprising:
introducing into a chamber for plasma enhanced
chemical vapor deposition (PECVD) one or more chemical
precursors comprising silicon and carbon along with a
carrier gas including nitrogen gas entraining the chemical
precursors into the chamber; and
carrying out the PECVD in the chamber such that
the carrier gas is activated to generate its own excited
species, thereby depositing a layer comprising silicon,
carbon and an element from the carrier gas on a substrate
in a chamber, wherein the nitrogen gas is an exclusive
source of the element for the layer.
17. A method for depositing a nitrogen-doped silicon
carbide (Si-C-N) material on a surface, comprising:
loading a substrate having a surface into a
processing chamber;
introducing chemical precursors into the
processing chamber, wherein the chemical precursors consist
essentially of a first chemical precursor that is a source
of carbon that is free of nitrogen; a second chemical
precursor, that is a source of silicon that is free of
nitrogen; and a third chemical precursor, wherein the third
chemical precursor is a carrier gas consisting essentially
of diatomic nitrogen gas; and
applying an electromagnetic energy to the first
chemical precursor and a carrier gas, thereby depositing on
the surface of the substrate the Si-C-N material comprising
silicon, carbon and nitrogen, wherein the nitrogen
contained in the deposited Si-C-N material consists
essentially of nitrogen that originates from the nitrogen
gas.
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