Appeal No. 2005-2239
Application No. 10/448,905
temperatures, which avoid the risk of Ni contamination, and the
position is taken that [A]ppellants’ claimed process should
recite the disclosed characteristics which reduce said risk of
contamination.” Id.
The first paragraph of 35 U.S.C. § 112 requires nothing
more than an objective enablement. In re Marzocchi, 439 F.2d
220, 223, 169 USPQ 367, 369 (CCPA 1971). How such teaching is
set forth, either by use of illustrative examples or by broad
terminology, is irrelevant. Id.
In the present case, the specification reveals (paragraph
[0021]):
The inventive process employs two primary etchant
gases: CHF3 and CH2F2. The gas flows are extremely
low, on the order of between about 10 and 40 sccm,
preferably about 20 sccm, of CHF3 and between about 10
and 40 sccm, preferably about 10 sccm, of CH2F2 for
relatively low pressure processes (approximately 20
mTorr). For higher pressure processes (approximately
45 mTorr), higher flow rates of CHF3 and CH2F2 may be
used. For example, CHF3 flows and CH2F2 flows may be
as high as about 40 sccm. Finally, flows of Ar (less
than about 100 sccm) can also be used at higher
pressures (40 mTorr). Additional quantities, on the
order of 10 sccm or less of other gases, such as C2HF5
and CF4 (carbon tetrafluoride), may be added. A
variant of the inventive process employing only CHF3
during the last portion thereof has been found to be
useful in providing a “punch” or dimple at the contact
bottom extending into the pristine substrate silicon
under the oxide and other layers.
5
Page: Previous 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Next
Last modified: November 3, 2007