Appeal No. 2006-0563
Application 09/941,537
forming an antireflectance coating (ARC) layer over the IMD
layer such that the ARC layer is formed over sidewalls of the at
least one via opening without filling the at least one via openings;
and
depositing a photoresist layer over the IMD layer and
photolithographically patterning a trench opening over the at least
one via opening.
The examiner relies upon the following references as evidence
of obviousness:
Filipiak et al. (Pilipiak) 5,918,147 Jun. 29, 1999
Yu et al. (Yu) 6,027,861 Feb. 22, 2000
Lin et al. (Lin) 6,042,999 Mar. 28, 2000
Appellants’ claimed invention is directed to a method for
reducing light reflectance from the sidewalls of a via in a
photolithographic trench patterning dual damascene process. The
method entails, inter alia, forming an antireflectance coating (ARC)
layer over the inter-metal dielectric (IMD) layer in a manner such
that the ARC layer is formed over the sidewalls of the via opening
but without filling the via opening.
Appealed claims 1-3, 7, 8, 10, 11, 13-15 and 17-24 stand
rejected under 35 U.S.C. § 103(a) as being unpatentable over Lin in
view of Yu and Filipiak.
The claims of the groups set forth at pages 8 and 9 of
appellants’ brief stand or fall together.
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