Ex Parte BRUNNER et al - Page 2




               Appeal 2006-1078                                                                                                   
               Application 09/425,694                                                                                             

                              whereby these treatment steps form a treatment sequence B2,                                         
                      which avoids rinsing with water or another treatment liquid and the                                         
                      addition of fresh water or other liquids to the treatment baths.                                            
                              12. A process for the wet chemical treatment of semiconductor                                       
                      wafers with treatment liquids in baths, comprising the steps of                                             
                              firstly treating the semiconductor wafers in a bath with an aqueous                                 
                      HF solution containing HF and optionally HCI and optionally a surfactant;                                   
                              then treating the semiconductor wafers in a bath with an aqueous                                    
                      O3 solution containing O3 and optionally HF; and                                                            
                              then treating the semiconductor wafers in a bath with an aqueous                                    
                      HCI solution containing HCI and optionally O3;                                                              
                              whereby these treatment steps form a treatment sequence B2; and                                     
                              circulating the treatment liquids of said bath by taking a part from                                
                      each of said baths, filtering and returning the part to the corresponding                                   
                      treatment bath.                                                                                             
                      References Relied on by the Examiner                                                                        
                      The examiner relies upon the following references as evidence of unpatentability:                           
               Berman                               5,014,737                            May 14, 1991                           
               Davison                              5,593,538                            Jan. 14, 1997                          
               Verhaverbeke et al.                   6,132,522                            Oct. 17, 2000                          
               (Verhaverbeke)                                                                                                     
               Pirooz et al.                        EP 0 701 275                         Mar. 13, 1996                          
               (Pirooz)                                                                                                           
                      Grounds of Rejection                                                                                        
                      1.   Claims 1-9 and 11 are rejected under 35 U.S.C. § 103(a) as unpatentable                                
               over Pirooz in view of Verhaverbeke.                                                                               
                      2.  Claims 12-15 are rejected under 35 U.S.C. § 103(a) as unpatentable over                                 
               Pirooz in view of Verhaverbeke and further in view of Berman or Davison.                                           
                      We reverse as to both grounds of rejection.                                                                 
                      Background                                                                                                  
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