Appeal 2006-1078
Application 09/425,694
The invention relates to processes for the wet chemical treatment of
semiconductor wafers using a particular sequence of treatment liquids. The inventors
have found that it is unnecessary to use a water rinsing step in the sequence, thereby
reducing processing costs associated with rinsing treatments. The processes are said
to be effective in removing metallic impurities and particles from semiconductor wafers.
Discussion
Claims 1-9 and 11 are rejected under 35 U.S.C. § 103(a) as unpatentable over
Pirooz in view of Verhaverbeke. Independent claims 1 and 11 are directed to processes
which require the steps of : (1) treating semiconductors in a bath with an aqueous HF
solution containing HF, (2) treating semiconductors in a bath with an aqueous O3
solution containing O3 and (3) treating semiconductors in a bath with an aqueous HCl
solution containing HCl.
The Examiner notes that Pirooz teaches a process for heat-treating a silicon
wafer which includes the steps of (1) contacting the surface of the wafer with an
aqueous solution containing HF and optionally HCl to remove metals from the wafer
surface; (2) contacting the wafer with ozonated water to grow a hydrophilic oxide layer.
Pirooz does not disclose a step of treating semiconductors in a bath with an aqueous
HCl solution containing HCl. Moreover, Pirooz discloses the wafers should be rinsed
with DI water after each of the steps. (Examiner’s Answer, p. 3).
The examiner relies on Verhaverbeke for a teaching of a sequential chemical
process wherein electronic component precursors are moved from one reaction
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