Appeal No. 2006-1231
Application No. 10/180,686
12: A device comprising:
a substrate;
a semiconductor device on said substrate, said
semiconductor device comprising an active region
comprising silicon;
a silicide contact on said active region, said
silicide contact comprising a first metal silicide and
an additional material, wherein said first metal
silicide comprises a metal capable of forming a second
metal silicide, wherein an amount of said additional
material causes formation of said first metal silicide
to be energetically favored over formation of said
second metal silicide.
THE REFERENCES
Anjum et al. (Anjum) 5,470,794 Nov. 28, 1995
Cabral, Jr. et al. (Cabral) 2002/0115262 Aug. 22, 2002
(filed Feb. 21, 2001)
Maa et al. (Maa) 6,468,901 Oct. 22, 2002
(filed May 2, 2001)
T. Ohguro et al. (Ohguro), “Nitrogen-doped nickel monosilicide
technique for deep submicron CMOS salicide”, paper presented at
Int’l Electron Devices Meeting, Washington, D.C., Dec. 10-13,
1995, at 453-56.
THE REJECTIONS
The claims stand rejected as follows: claims 12, 14, 15, 18,
29, 31, 32 and 34 under 35 U.S.C. § 102(b) as anticipated by
Ohguro; claims 12, 15, 29 and 32 under 35 U.S.C. § 102(b) as
anticipated by Anjum; claims 12-15, 17, 18 and 29-34 under
2
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