Appeal No. 2006-1231
Application No. 10/180,686
soluble solid solution having a reduced total free energy,
thereby reducing the driving force to form NiSi2 (col. 4,
lines 36-59). That is the mechanism set forth by the appellants
(specification, page 6, line 22 - page 7, line 6).
Moreover, Cabral’s Ge is present in Ni-Si-Ge in an amount
(about 2-10 at%, 5 at% being exemplified) within the range used
by the appellants (less than about 15 at%, such as about
5-10 at%; specification, page 3, lines 1-4). Because Cabral’s
materials and amounts are the same as those of the appellants,
the favoring of NiSi over NiSi2 obtained by the appellants
necessarily is obtained by Cabral.
As for Anjum and Ohguro, Anjum discloses a Ge implant dose
of 1x1013 to 5x1014 atoms/cm2 (col. 7, lines 33-34), and Ohguro
discloses a nitrogen concentration of 1017-1021 atoms/cm3 (fig.
2). The appellants’ disclosed ion implant dose is about 1x1018
to 1.5x1018 atoms/cm2 (specification, page 8, lines 11-13).
Because the materials of Anjum and Ohguro are the same as those
as the appellants, the references provide evidence that, prima
facie, the energetic favoring of one metal silicide over another
required by the appellants’ claims necessarily is obtained. See
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