Appeal No. 2006-1231
Application No. 10/180,686
35 U.S.C. § 102(e) as anticipated by Maa; and claims 12-15, 18,
19, 29-32, 34 and 35 under 35 U.S.C. 102(e) as anticipated by
Cabral.
OPINION
We affirm the aforementioned rejections.
Ohguro discloses a semiconductor device having a silicide
contact comprising nitrogen-doped NiSi (page 453). The disclosed
concentration of nitrogen, which is one of the appellants’
additional materials, in the NiSi is about 1016 to 1021 atoms/cm3
(fig. 2).
Anjum discloses a semiconductor device having germanium,
which is one of the appellants’ additional materials, implanted
into the interface between a metal layer and silicon that are
annealed to form metal silicide (col. 3, lines 43-65). The
disclosed germanium implant dosage is 1x1013 to 5x1014 atoms/cm2
(col. 7, lines 33-34).
Maa discloses a semiconductor device having NiSi containing
an impurity that can be iridium, which is one of the appellants’
additional materials (col. 4, lines 31-59). The impurity is
added by depositing a 5-20A iridium layer between silicon and a
3
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