Appeal No. 2006-1350
Application No. 10/074,732
BACKGROUND
The invention relates to a method of forming a vertical double gate
semiconductor device. Representative claim 1 is reproduced below.1
1. A method of forming a vertical double gate semiconductor device comprising:
providing a semiconductor substrate;
providing a first insulating layer over the semiconductor substrate;
providing a first semiconductor layer over the first insulating layer;
removing portions of the first semiconductor layer to form a semiconductor
structure having a first sidewall and a second sidewall, wherein the first sidewall is
opposite the second sidewall;
forming a second insulating layer adjacent the first sidewall and the second
sidewall;
providing a second semiconductor layer over and adjacent the semiconductor
structure, the second semiconductor layer being elevated in an area overlying the
semiconductor structure and having a non-horizontal surface adjoining the
semiconductor structure;
performing a first directional implant of a first conductivity type of the second
semiconductor layer from a first predetermined direction;
performing a second directional implant of a second conductivity type opposite
the first conductivity type of the second semiconductor layer from a second
predetermined direction that differs from the first predetermined direction;
forming a conductive layer over the semiconductor structure and the second
insulating layer; and
1 We observe that instant claim 14 purports to incorporate the limitations of claim 13, which has
been canceled.
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