Appeal No. 2006-1350
Application No. 10/074,732
removing a portion of the conductive layer and the second semiconductor layer
to physically separate a first gate region and a second gate region, wherein:
the first gate region is adjacent the first sidewall of the semiconductor structure
and has the first conductivity type; and
the second gate region is adjacent the second sidewall of the semiconductor
structure and has the second conductivity type, the semiconductor structure preventing
migration of doping species between the first gate region and the second gate region.
The examiner relies on the following references:
Forbes et al. (Forbes) US 6,097,065 Aug. 1, 2000
Adkisson et al. (Adkisson) US 6,472,258 B1 Oct. 29, 2002
(filed Nov. 13, 2000)
Fried et al. (Fried) US 2003/0113970 Jun. 19, 2003
(filed Dec. 14, 2001)
Claims 1, 2, 4, 5, 7-12, 14, 16-21, 23-25, and 34 stand rejected under 35 U.S.C.
§ 103 as being unpatentable over Adkisson and Fried.
Claim 15 stands rejected under 35 U.S.C. § 103 as being unpatentable over
Adkisson, Fried, and Forbes.
Claims 3, 6, 13, 22, and 26-33 have been canceled and claims 35 and 36 have
been withdrawn from consideration.2
2 Although the purported status of claims 22 and 23 is inconsistent in the papers relating to the
instant appeal, claim 23 is pending but claim 22 was canceled by an amendment filed June 9, 2004.
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