Appeal No. 2006-1797
Application No. 09/866,319
found only if the prior art reference discloses every element of
the claim. See In re King, 801 F.2d 1324, 1326, 231 USPQ 136,
138 (Fed. Cir. 1986) and Lindemann Maschinenfabrik GMBH v.
American Hoist & Derrick Co., 730 F.2d 1452, 1458, 221 USPQ 481,
485 (Fed. Cir. 1984).
With respect to representative claim 45, Appellants argue in
the Appeal and Reply Briefs that the Marty reference does not
disclose an n-type dopant region having a vertical width (W) that
is sufficiently narrow to avoid lowering the collector base
breakdown voltage and a dopant concentration sufficiently high to
restrict base widening when the base junction is forward biased.
Appellants further contend that because Marty teaches overdoping
the SIC region by implanting phosphorous into the collector
through the base, a tail of n-type dopant is necessarily present,
and it is extended from the base to the collector, thereby
preventing the vertical width of the SIC region from being
sufficiently narrow. Particularly, at pages 8 and 9 of the Appeal
Brief, Appellants state the following:
Marty, et al. disclose a bipolar transistor including
an overdoped selectively implanted collector (SIC) region,
where the SIC region is formed by a process requiring a
high-energy implant and a light (high-diffusivity) ion, such
as phosphorus. See Col. 3, line 66. The high implant
energy and light ion are required in the prior art to
produce the SIC region, since the SIC region is formed by
implanting the light (high-diffusivity) ion into the
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