Appeal No. 2006-1949
Application 10/193,823
a plurality of gallium nitride posts on the silicon carbide substrate, the posts each
including a sidewall and a top, and defining a plurality of trenches therebetween;
a capping layer on the tops of the post; and
a lateral gallium nitride layer that extends laterally form the sidewalls of the posts
into the trenches.
The following reference is relied on by the examiner:
Nam et al., “Lateral epitaxy of low density GaN layers via organometalic
vapor phase epitaxy,” App. Phys. Lett., Vol. 71, No. 18, 3 November 1997, pp.
2638-2640.
Claims 1 through 5, 9 through 11, 13 through 17, 19 and 20 stand rejected
under 35 U.S.C. § 102 as being anticipated by Nam. This reference is also used by the
examiner alone within 35 U.S.C. § 103, the examiner alleging that claims 6 through 8,
12 and 18 would have been obvious to one of ordinary skill in the art.
Rather than repeat the positions of the appellants and the examiner, reference is
made to the brief and reply brief for appellants’ positions, and to the answer for the
examiner’s positions.
OPINION
Because we consider that Nam teaches within 35 U.S.C. § 102 and suggest
within 103 the only argued claims 1, 6 and 7 within the above noted rejections, we
sustain the examiner’s rejections of these claims.
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