Appeal No. 2006-1949
Application 10/193,823
Corresponding teachings are found in Nam. We reproduce here a significant
portion of the paragraph bridging columns 1 and 2 at page 2638 of Nam:
In the present study, the lateral overgrowth of GaN strips patterned in a
SiO2 mask deposited on GaN film/AIN buffer layer/6H-SiC(001) substrates in
the manner shown in schematically in Fig. 1 was investigated. To achieve
lateral overgrowth, the GaN was deposited on the underlying GaN layer
through the windows in the SiO2 mask. The deposited material grew vertically
to the top of the mask and then both laterally over the mask and vertically until
the lateral growth fronts from many different windows coalesced and formed a
continuous layer.
The showing in figure 1 as argued by the examiner corresponds to the claimed
subject matter taken with this explanation of the process of forming intermediate
produces with respect thereto. This quoted portion in figure 1 shows the existence of
what may be fairly characterized as a gallium nitride post on a silicon carbide
substrate where each post includes a side wall and a top portion and also defining
trenches that exist between sidewalls. The windows in the mask in figure 1
correspond to the trenches yielding the resulting material intermediate with respect to
the claimed posts. The claimed capping layer includes the overgrown material of
gallium nitride on top of the post as shown in figure 1. Clearly, figure 1 shows and the
noted portion quoted above explains that the gallium nitride layer extents laterally
from the sidewall area of the post into the trenches as claimed.
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