Appeal No. 2006-2209
Application No. 10/270,913
CITATION OF REFERENCES
The Examiner relies on the following references in
rejecting the claims on appeal:
Van Buskirk et al. (Van Buskirk) 6,254,792 Jul. 3, 2001
Ko et al. (Ko) 6,770,567 Aug. 3, 2004
Ying et al. (Ying ‘494) 2003/0022494 A1 Jan. 30, 2003
Ying et al. (Ying ‘073) 2003/0176073 A1 Sep. 18, 2003
The Examiner entered the following rejections:
(I) Claims 1, 2, 4 to 9, and 11 to 15 stand rejected
under 35 U.S.C. § 103(a) as obvious over Ko and Ying ‘494.
(II) Claims 3 and 25 stand rejected under 35 U.S.C. §
103(a) as obvious over Ko, Ying ‘494 and Ying ‘073.
(III) Claims 1 to 5, 7 to 9, 11 to 14, 17 to 22, 24 and 25
stand rejected under 35 U.S.C. § 103(a) as obvious over Ying
‘073 and Ying ‘494.
(IV) Claims 10 and 23 stand rejected under 35 U.S.C. §
103(a) as obvious over Ying ‘494, Ying ‘703 and Van Buskirk.
Appellants’ invention relates to a method of etching a
bottom electrode layer in a ferroelectric capacitor stack. The
method comprises forming a mask over the ferroelectric
capacitor stack, etching the capacitor stack to expose the
bottom electrode layer and plasma etching the bottom electrode
2
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