Appeal No. 2006-2209
Application No. 10/270,913
layer. Representative claim 1, as presented in the Brief,
appears below:
1. A method of etching a bottom electrode layer in a
ferroelectric capacitor stack, comprising:
forming a hard mask over the ferroelectric capacitor
stack;
etching the capacitor stack to expose the bottom
electrode layer;
plasma etching the bottom electrode layer at a low
bias of less than 150 W with an atmosphere comprising a
halogen compound and an oxygen source containing carbon.
Upon careful consideration of Appellants’ position and the
position set forth by the Examiner, we are in complete
agreement with the Examiner’s well supported position.
Accordingly we affirm all of the Examiner’s rejections for the
reasons set forth in the Answer and add the following primarily
for emphasis.
Appellants have not challenged the Examiner’s motivation
for combining Ko and Ying ‘494 together to reject the claimed
subject matter. Rather, Appellants argue that the combination
would not produce the claimed invention (Brief, p. 4). In
further support of this argument, Appellants assert that Ying
‘494 does not teach a plasma etch at a bias of less than 150 W
as claimed. (Brief, p. 4). Appellants further argue that Ying
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