Ex Parte Zhou et al - Page 6

              Appeal 2006-2650                                                                     
              Application 10/011,886                                                               











              2) Kasami Figure 8 shows a multilayer structure having a substrate (1), a            
                    dielectric layer (7A), a reflective layer (5), a second dielectric layer       
                    (7B), a dielectric crystallization promotion layer (3), a phase change         
                    recording layer (2), a second dielectric crystallization promotion layer       
                    (4), a dielectric layer (7C) an absorption correction layer (8), a fourth      
                    dielectric layer (7D) and a polymeric protective layer (6).                    
              3) Kasami includes several exemplary multilayer structures in which                  
                    crystallization promoting layers adjacent the recording layer have a           
                    thickness of 4 nm. (See, e.g., Examples 7 and 8).                              
              4) Kasami teaches that GeTe and GeTeSb recording layers function by                  
                    changing phase between an amorphous state and a crystalline state.             
                    (Col. 11, l. 65-col. 12, l. 7).                                                
              5) Kasami examples 5-11 use Al reflective layers, ZnS-SiO2 dielectric                
                    layers, GeTeSb recording layers and 4 nm Si-C-0-H crystallization              
                    promoting layers.  (See col. 18, l. 20 - col. 21, l. 22).                      
              6) Kasami discloses that the reflective layer (5) may be any of various              
                    metals, metal alloys and the like, including Ag, Au, Al, W, etc, and           
                    alloys thereof in thicknesses of 5-200 nm.  (Col. 12, ll. 35-37).              

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