Appeal 2006-2650
Application 10/011,886
2) Kasami Figure 8 shows a multilayer structure having a substrate (1), a
dielectric layer (7A), a reflective layer (5), a second dielectric layer
(7B), a dielectric crystallization promotion layer (3), a phase change
recording layer (2), a second dielectric crystallization promotion layer
(4), a dielectric layer (7C) an absorption correction layer (8), a fourth
dielectric layer (7D) and a polymeric protective layer (6).
3) Kasami includes several exemplary multilayer structures in which
crystallization promoting layers adjacent the recording layer have a
thickness of 4 nm. (See, e.g., Examples 7 and 8).
4) Kasami teaches that GeTe and GeTeSb recording layers function by
changing phase between an amorphous state and a crystalline state.
(Col. 11, l. 65-col. 12, l. 7).
5) Kasami examples 5-11 use Al reflective layers, ZnS-SiO2 dielectric
layers, GeTeSb recording layers and 4 nm Si-C-0-H crystallization
promoting layers. (See col. 18, l. 20 - col. 21, l. 22).
6) Kasami discloses that the reflective layer (5) may be any of various
metals, metal alloys and the like, including Ag, Au, Al, W, etc, and
alloys thereof in thicknesses of 5-200 nm. (Col. 12, ll. 35-37).
6
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