Ex Parte Zhou et al - Page 8

                 Appeal 2006-2650                                                                                       
                 Application 10/011,886                                                                                 

                                                         Tyan                                                           
                 12) Tyan teaches GeTe based optical recording media where the Ge                                       
                        content is 45-70%.                                                                              
                 13) Tyan discloses that GeTe films have increased contrast, corrosion                                  
                        resistance, data stability and a high erasure rate (less than 1                                 
                        microsecond).  (Col.  2, ll. 22-40).                                                            
                 14) The reflectance change is sharpest for 49.9% Ge (Fig. 4), which also                               
                        has high contrast (Fig. 3).                                                                     
                                                         Uno                                                            
                 15) Uno teaches that crystallization enhancing layers protect the recording                            
                        layer from oxidation, corrosion, distortion and the like.                                       
                 16) Uno teaches that crystallization enhancing layers prevent migration of                             
                        atoms from the protective layers into the recording layer, which is                             
                        especially important when the protective layers contain sulfur or                               
                        sulfides.  (Col. 5, l. 44 – Col. 6, l. 25).                                                     
                 17) Uno discloses that crystallization acceleration layers may be various                              
                        nitrides, oxide, oxynitrides or carbides, including SiN, AlN, SiO2,                             
                        Ta205 and SiC.  (Col. 7, ll. 9-30).  The crystallization acceleration                           
                        layers may be 1-40 nm thick.  (Col. 10, ll. 61-65).                                             
                                                      Kobayashi                                                         
                 18) Kobayashi discloses the addition of nitrogen to GeTe films in amounts                              
                        of 5% as the average content of the film.                                                       
                 19) Kobayashi teaches that the addition of nitrogen, particularly when                                 
                        graded with increasing amounts of nitrogen in the middle of the film                            
                        toward the protective layer, prevents oxidation of the medium and                               


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