Appeal 2006-3286
Application 10/422,290
round periphery between the flat surfaces. The method comprises selecting
a generally circular support tape to place below the wafer, and thinning the
wafer by removing semiconductor material from the second wafer surface
until the intended thickness is achieved (Br. 2).1 The diameter of the tape is
selected to be greater than the diameter of the wafer at each side by an
amount about equal to the length of the rounding at the edge of the wafer
after thinning is accomplished (id.).
Appellant states that the claims should be considered as three groups
(Br. 5). However, Appellant does not discuss each group of claims under a
separate heading and only presents specific, substantive arguments regarding
claims 1, 11, and 16 (e.g., Br. 6; Answer 2). Accordingly, we limit our
consideration to claims 1, 11, and 16 to the extent these claims are separately
argued. Illustrative independent claim 1 is reproduced below:
1. A method of thinning a semiconductor wafer having first and
second flat surfaces of a first diameter and a rounded periphery between said
flat surfaces, comprising the steps of:
selecting a generally circular support tape for said wafer, said tape
having a second diameter;
selecting said second diameter to be greater than said first diameter by
an amount about equal to the length of said peripheral wafer rounding as
obtained in said wafer after said thinning step is completed;
placing said first flat wafer surface on said tape; and removing
semiconductor material from said second wafer surface until the intended
thickness is achieved.
1 We refer to and cite from the “Response to Non-Compliant Appeal Brief”
dated Apr. 19, 2006.
2
Page: Previous 1 2 3 4 5 6 Next
Last modified: September 9, 2013