Appeal 2007-0096
Application 09/969,467
Appellant’s invention is directed to a method for removing photoresist
(an organic substance) from a semiconductor wafer using vapor obtained
from ultrapure water. The vapor is blown at an elevated temperature onto a
surface of the wafer. The vapor is irradiated with ultraviolet (UV) rays
resulting in an increase in hydroxyl radicals. Claim 1 is illustrative and
reproduced below:
1. A method for cleaning a photoresist or an organic substance from a
semiconductor wafer, consisting essentially of:
generating vapor by heating ultrapure water;
increasing the number of hydroxyl radials in the vapor by irradiating
ultraviolet rays into the vapor; and
removing an organic substance from said semiconductor wafer surface
by blowing the vapor at a temperature of 85ēC or higher onto the
semiconductor wafer surface.
The Examiner relies on the following prior art references as evidence
in rejecting the appealed claims:
Pokharna US 6,596,343 B1 July 22, 2003
Miki US 6,610,168 B1 Aug. 26, 2003
Claims 1, 3-6, and 8 stand rejected under 35 U.S.C. § 103(a) as being
unpatentable over Miki in view of Pokharna. Appellant argues the appealed
claims together as a group. Thus, we select claim 1 as representative of the
appealed claims in deciding this appeal.
The Examiner has determined that Miki teaches “generating steam/
vapor by heating ultrapure water (col. 2, lines 34-36)” and spraying/blowing
steam/water vapor at a temperature of 75-85° C onto the semiconductor
substrate/wafer surface to peel/remove photoresist (col. 12, lines 1-5).”
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