Appeal 2007-0378
Application 10/212,895
STATEMENT OF THE CASE
Appellants invented a method for forming a paraelectric capacitor.
Specifically, a seed layer is deposited on an oxide electrode using a
paraelectric material precursor. Then, a paraelectric layer is deposited on the
seed layer using the paraelectric material precursor. This technique allows
for, among other things, better grain size control and lower temperature
processing (Specification 3:10-19). Claim 1 is illustrative:
1. A method for forming a paraelectric capacitor:
forming a buried contact in a dielectric layer;
forming an oxide electrode in contact with the buried contact;
depositing a seed layer on the oxide electrode using a paraelectric
material precursor;
depositing a paraelectric layer on the seed layer using the paraelectric
material precursor; and
forming an upper electrode in contact with the paraelectric layer.
The Examiner relies on the following prior art references to show
unpatentability:
Roeder US 5,876,503 Mar. 2, 1999
Kim US 6,229,166 B1 May 8, 2001
Norga US 2003/0133250 A1 Jul. 17, 2003
(filed Jan. 21, 2003)1
The Examiner’s rejections are as follows:
1. Claims 1, 7, 10, 11, 17, and 20 are rejected under 35 U.S.C. § 103(a)
as unpatentable over Norga in view of Roeder.
2. Claims 2-6, 8, 9, 12-16, 18, and 19 are rejected under 35 U.S.C.
1 Continuation of Application No. 09/857,320 filed Aug. 31, 2001, now U.S.
Pat. 6,545,856.
2
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