Ex Parte Gilbert et al - Page 2

                 Appeal 2007-0378                                                                                   
                 Application 10/212,895                                                                             
                                                                                                                   
                                         STATEMENT OF THE CASE                                                      
                       Appellants invented a method for forming a paraelectric capacitor.                           
                 Specifically, a seed layer is deposited on an oxide electrode using a                              
                 paraelectric material precursor.  Then, a paraelectric layer is deposited on the                   
                 seed layer using the paraelectric material precursor.  This technique allows                       
                 for, among other things, better grain size control and lower temperature                           
                 processing (Specification 3:10-19).  Claim 1 is illustrative:                                      
                       1.  A method for forming a paraelectric capacitor:                                           
                       forming a buried contact in a dielectric layer;                                              
                       forming an oxide electrode in contact with the buried contact;                               
                       depositing a seed layer on the oxide electrode using a paraelectric                          
                 material precursor;                                                                                
                       depositing a paraelectric layer on the seed layer using the paraelectric                     
                 material precursor; and                                                                            
                       forming an upper electrode in contact with the paraelectric layer.                           

                       The Examiner relies on the following prior art references to show                            
                 unpatentability:                                                                                   
                 Roeder                      US 5,876,503               Mar. 2, 1999                                
                 Kim                         US 6,229,166 B1            May 8, 2001                                 
                 Norga                       US 2003/0133250 A1         Jul. 17, 2003                               
                                                                        (filed Jan. 21, 2003)1                      

                       The Examiner’s rejections are as follows:                                                    
                    1. Claims 1, 7, 10, 11, 17, and 20 are rejected under 35 U.S.C. § 103(a)                        
                       as unpatentable over Norga in view of Roeder.                                                
                    2. Claims 2-6, 8, 9, 12-16, 18, and 19 are rejected under 35 U.S.C.                             

                                                                                                                   
                 1 Continuation of Application No. 09/857,320 filed Aug. 31, 2001, now U.S.                         
                 Pat. 6,545,856.                                                                                    
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