Appeal 2007-0442
Application 10/470,060
The subject matter on appeal is directed to “a method of forming a
thick silicon dioxide film on a silicon substrate” (Specification 1). The
method “comprises repeating steps of depositing a silicon layer on a silicon
substrate and then, subjecting the silicon layer to a thermal oxidation
treatment to form a silicon dioxide film of a predetermined thickness….”
(Specification 3). This method is said to overcome the problems associated
with a typical thick silicon dioxide film forming method (Specification 1-2).
Details of the appealed subject matter are recited in representative claim 3
reproduced below:
3. A method of forming a silicon dioxide film of a predetermined
thickness on a silicon substrate, comprising:
a deposition step of depositing epitaxial silicon on said silicon
substrate or on a silicon dioxide film formed on said silicon substrate by a
thermal oxidation treatment to obtain a deposited epitaxial silicon film; and
a thermal oxidation step of oxidizing said deposited epitaxial
silicon film by heat to convert it into a silicon dioxide film,
wherein said deposition step and said thermal oxidation step are
repeated a plural number of times.
As evidence of unpatentability of the claimed subject matter, the
Examiner has relied upon the following references:
Jacobson US 3,807,039 Apr. 30, 1974
Faraone US 4,604,304 Aug. 5, 1986
Corboy, Jr. US 4,698,316 Oct. 6, 1987
Arai US 2001/0001384 A1 May 24, 2001
Sato US 6,375,738 B1 Apr. 23, 2002
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