Ex Parte Wu et al - Page 2


               Appeal 2007-1234                                                                             
               Application 10/017,990                                                                       
                                            THE INVENTION                                                   
                      The disclosed invention relates generally to semiconductor electronic                 
               circuits, and, more particularly, to an electronic circuit with an electrical                
               hole insulator (Specification 1).                                                            
                      Independent claim 1 is illustrative:                                                  
               1.  An electronic circuit, comprising:                                                       
                            a semiconductor substrate;                                                      
                            a first layer in a fixed physical relation to the semiconductor                 
                      substrate;                                                                            
                            a well formed in the first layer, wherein the well comprises a                  
                      first conductivity type and has a side dimension and a bottom                         
                      dimension;                                                                            
                            a first enclosure surrounding the side dimension and the bottom                 
                      dimension of the well, wherein the first enclosure comprises a second                 
                      conductivity type complementary of the first conductivity type and                    
                      has a side dimension and a bottom dimension; and                                      
                            a second enclosure surrounding the side dimension and the                       
                      bottom dimension of the first enclosure, wherein the second enclosure                 
                      comprises the first conductivity type.                                                

                                           THE REFERENCES                                                   
               Husher   US 5,179,432  Jan. 12, 1993                                                         
               Taniguchi   US 5,399,510  Mar. 21, 1995                                                      
               Sze, S.M., “Semiconductor Devices, Physics and Technology”, Wiley &                          
               Sons., New York, 1985, p. 139.                                                               




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