Ex Parte Randazzo et al - Page 2


                Appeal 2007-1540                                                                               
                Application 10/280,788                                                                         
                                                INVENTION                                                      
                      The invention is directed to an input buffer which protects an                           
                integrated circuit from overvoltage conditions.  See page 2 of Appellants’                     
                Specification.  Claim 17 is representative of the invention and reproduced                     
                below:                                                                                         
                             17.  A high speed input buffer electrically connected to an input                 
                      voltage pad, the high speed input buffer comprising:                                     
                             a native transistor having a first contact electrically connected                 
                      to the input voltage pad,                                                                
                             a single ended input circuit electrically connected to a second                   
                      contact of the native transistor, and                                                    
                             a leakage element having a first electrical connection and a                      
                      second electrical connection, the first electrical connection of the                     
                      leakage element directly connected to the second contact of the first                    
                      native transistor and the second electrical connection of the leakage                    
                      element electrically connected to a VSS line, where the leakage                          
                      element is one of a single NMOS transistor where a gate contact of the                   
                      NMOS transistor is electrically connected only to the second contact                     
                      of the native transistor, and a resistor.                                                
                                               REFERENCES                                                      
                             The references relied upon by the Examiner are:                                   
                      Nakakura  US 5,512,844  Apr. 30, 1996                                                    
                      Metzler  US 6,420,757 B1  Jul. 16, 2002                                                  
                      Cress   US 6,483,386 B1  Nov. 19, 2002                                                   





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