Appeal 2007-1648
Application 10/631,098
INVENTION
The invention is directed to a circuit which modulates the body
potential of a silicon over insulator (SOI) metal oxide silicon field effect
transistor MOSFET to provide robust Electrostatic Discharge protection
(ESD). (See pages 3 and 4 of Appellant’s Specification). Claim 14 is
representative of the invention and reproduced below:
14. A silicon over insulator (SOI) metal oxide silicon field
effect transistor (MOSFET) device comprising:
a body that is floating with respect to an underlying substrate;
a gate opposite said body;
an RC discriminator comprising a resistor and a capacitor,
wherein said RC discriminator is connected to said gate at a point of
said RC discriminator between said resistor and said capacitor; and
a circuit control network connected to said body, said circuit
control network modulating a potential voltage of said body to
provide electrostatic discharge (ESD) protection.
REFERENCES
The references relied upon by the Examiner are:
Sasaki US 5,039,873 Aug. 13, 1991
Brady US 5,314,841 May 24, 1994
Au US 5,528,188 Jun. 18, 1996
Ker US 5,631,793 May 20, 1997
Chatterjee US 6,015,992 Jan. 18, 2000
(filed Dec. 30, 1997)
Chen US 6,242,763 B1 Jun. 5, 2001
(filed Sep. 14, 1999)
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