Appeal 2007-2304
Application 10/209,004
THE INVENTION
The Appellant claims a method for forming an electrode having a nodular
shape,1 and claims methods for forming a capacitor, a semiconductor device, a
memory array and a wafer that include the method for forming the electrode.
Claim 2, which claims the method for forming the electrode, is illustrative:
2. A method for forming an electrode for use in a capacitor comprising:
forming an insulating layer;
forming a contact in said insulating layer;
forming an electrode layer on said insulating layer and on said
contact;
etching said electrode layer utilizing a dry etch; and
etching said electrode layer utilizing a wet etch to form an
electrode having a nodular shape; wherein said capacitor containing
2
said electrode therein exhibits reduced current leakage.[ ]
1 The Appellant states: “As used herein to define the present invention, the1
term ‘nodular shape’ means a structure having a finite cross section which includes
a curved or partially curved cross section, and a partially square or rectangular
cross section having curved corners, partially curved corners or faceted corners and
having a width equal to or greater than the width of the contact 64 or 114. The
term ‘nodular shape’ does not incorporate either a square cross section or a
rectangular cross section” (Spec. 15:20-25).
2 The Appellant states: “By providing the first electrodes 72 and 116 with a
nodular shape, the prior art problem of improper step coverage can be avoided.
The nodular shaped electrodes 72 and 116 allow for an even coverage of the of the
[sic] other layers of the capacitor, the layers of dielectric material and the layer of
second electrode material, on the first electrodes 72 and 116. This even coverage
reduces, if not eliminates, charge leakage from the corners 32 and 33 of the prior
2
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