Appeal 2007-2304
Application 10/209,004
THE REFERENCES
Sandhu US 5,381,302 Jan. 10, 1995
Hosaka (as translated) JP 62-115767 May 27, 1987
THE REJECTION
Claims 2 and 4-11 stand rejected under 35 U.S.C. § 103 as being
unpatentable over Sandhu in view of Hosaka.
OPINION
We affirm the aforementioned rejection.
The Appellant indicates that the claims stand or fall in three groups:
1) claims 2, 4-6 and 10; 2) claims 7 and 9; and 3) claims 8 and 11 (Br. 8). We
therefore limit our discussion to one claim in each group, i.e., claims 2, 7 and 8.
See In re Ochiai, 71 F.3d 1565, 1566 n.2, 37 USPQ2d 1127, 1129 n.2 (Fed. Cir.
1995); 37 CFR § 41.37(c)(1)(vii)(2004).
Claims 2 and 7
Sandhu discloses a method for forming a storage node electrode of a
capacitor in a dynamic random access memory (DRAM) device, comprising
forming an insulating layer (40; figure 3), forming a contact (65) in the insulating
layer (figure 5), forming an electrode layer (85) on the insulating layer and the
art capacitor 10 shown in Fig. 1” (Spec. 22:18-23).
3
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