Appeal 2007-2384
Application 10/943,424
This is a decision on appeal under 35 U.S.C. § 134 from the Examiner's
final rejection of claims 1-3, 5-9, and 21-29. We have jurisdiction under 35
U.S.C. § 6(b).
We AFFIRM.
BACKGROUND
Appellants’ invention relates to a poly-silicon-germanium gate stack and
method for forming the same. An understanding of the invention can be
derived from a reading of exemplary claim 1 , which is reproduced below.
1. A gate stack for semiconductor MOS device
comprising:
a dielectric film formed on a semiconductor substrate of
said semiconductor MOS device;
a first α-Si layer formed on the dielectric film having a
thickness from about 30 Ǻ to about 50 Ǻ;
a poly-SiGe layer formed on the first α-Si layer;
a second α-Si layer formed on the poly-SiGe layer; and
a poly-Si layer formed on the second α-Si layer.
PRIOR ART
The prior art references of record relied upon by the Examiner in
rejecting the appealed claims are:
KIM US 2003/0025165 A1 Feb. 6, 2003
RYU US 6,855,641 B2 Feb. 15, 2005
BAE US 6,878,580 B2 Apr. 12, 2005
2
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