Ex Parte Dantz et al - Page 5

                Appeal 2007-3417                                                                               
                Application 10/351,739                                                                         

                orientation was known, it follows that one of ordinary skill in the art would                  
                have understood from the teachings of Aydelott that a <113> oriented single                    
                crystal would be obtained when selecting a <113> seed crystal for use in the                   
                Czochralski process.  “The combination of familiar elements according to                       
                known methods is likely to be obvious when it does no more than yield                          
                predictable results.”  KSR Int’l v. Teleflex Inc., 127 S. Ct. 1727, 1739, 82                   
                USPQ2d 1385, 1395 (2007).                                                                      
                      We also conclude that the evidence supports the Examiner’s                               
                determination that fashioning the silicon single crystal of Aydelott with a                    
                dash seed of at most 70 mm length would have been within the capabilities                      
                of one of ordinary skill in the art and therefore obvious.                                     
                According to Aydelott:                                                                         
                             Unfortunately, dislocation defects are generated in the                           
                      seed crystal due to thermal shock as the seed crystal contacts                           
                      the relatively hot melt.  If corrective actions are not taken, the                       
                      dislocation defects propagate through and multiply in the                                
                      growing crystal.  As known to those skilled in the art,                                  
                      dislocations generally propagate along crystallographic planes.                          
                      For a silicon seed crystal having a <100> orientation, the                               
                      dislocations typically propagate along a plane that extends at an                        
                      angle of 55° from the longitudinal axis of the crystal.                                  
                      In order to terminate the dislocations prior to propagation                              
                      through the main body of the crystal, crystals typically have a                          
                      neck section extending between the seed crystal and the main                             
                      body of the crystal.  The most common method of eliminating                              
                      dislocations is known as the Dash method and involves growing                            
                      a neck having a relatively small diameter and a relatively long                          
                      length.  For example, a neck grown according to the Dash                                 
                      method may have a diameter of between 2 mm and 4 mm and a                                
                      length between 30 mm and 200 mm.  As the neck is grown, the                              
                      dislocations propagate through the neck toward the interface of                          
                      the seed crystal and the melt.  As a result of the extended length                       

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