Appeal No. 94-3365
Application 07/759,571
THE CLAIMED SUBJECT MATTER
The subject matter on appeal is directed to a method of
forming a mixed-crystal structure or a crystalline chemical
compound film having desired properties on a crystalline
substrate, without the formation of lattice defects at the
interface thereof. See specification, page 2, lines 13-18, and
page 3, lines 10-11, and claim 1. The method comprises initially
providing a commercially available SIMOX-wafer as a starting
material. See specification, pages 6 and 7, examples 1 and 2.
The SIMOX-wafer consists of a crystalline silicon substrate, a
buried amorphous silicon dioxide layer and a monocrystalline
silicon surface layer. See specification, examples 1 and 2 in
conjunction with claim 1, step (a). The monocrystalline silicon
surface layer of the SIMOX-wafer is subsequently transformed into
a mixed-crystal structure or a crystalline chemical compound.
See specification, page 4 in conjunction with claim 1, step (b).
The unaltered amorphous layer interposed between the mixed-
crystal structure or the crystalline chemical compound and the
crystalline substrate precludes "the propagation of defects from
the interface" due to "no communicated stresses at the
crystalline/amorphous interface." See specification, page 3,
lines 12-20.
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Last modified: November 3, 2007