Appeal No. 94-3365
Application 07/759,571
the monocrystalline silicon surface layer of the SIMOX-type wafer
into a mixed-crystal structure or a crystalline chemical
compound. See page 3 of the Answer. Thus, the examiner relied
on the Ishizaka reference to establish that the transformation of
the monocrystalline silicon surface layer of the SIMOX-type wafer
into a mixed-crystal structure or a crystalline chemical
compound, without altering the buried amorphous layer, would have
been obvious to one skilled in the art.
At issue is, therefore, whether the Ishizaka reference
provides sufficient suggestion or motivation to transform the
monocrystalline silicon surface layer on the buried amorphous
layer to arrive at the claimed subject matter.
As stated by the examiner at the unnumbered page and page 4
of the Answer, Ishizaka does disclose that as a method of growing
epitaxially a monocrystalline film of CoSi or NiSi on single2 2
crystal silicon underlie, the solid phase epitaxy in which an Ni
or a Co film reacts with a Si substrate has been known. See
column 1, lines 17-21 and lines 37-41. This reaction, however,
includes diffusion of Ni or Co atoms into Si substrates, thus
causing the resultant film to have inferior morphology. See
column 1, lines 26-30, and column 1, lines 41-45. To avoid this
and other disadvantages associated with the conventional solid
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