Appeal No. 95-1527
Application No. 07/862,066
Appellant’s Claim 1 is reproduced as follows:
1. A read-out circuit for use with a semiconductor
memory device, said read-out circuit comprising:
first selecting means for selectively reading at
least one datum from a plurality of memory means;
first data storing means for storing the data
read out by said selecting means;
transferring means for transferring the data
stored in said first data storing means in
synchronism with an external clock signal;
second data storing means for storing the data
transferred from said transferring means;
second selecting means for selectively
outputting to an output port the data stored in said
second data storing means; and
presetting means for presetting the voltage
level of the line onto which said first selecting
means reads out data.
The Examiner’s Answer relies on admitted prior art and
the following prior art reference:
Lam et al. (Lam) 4,731,758 Mar. 15,
1988
OPINION
2
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