Appeal No. 95-2138
Application 07/852,078
This is a decision on appeal from the final rejection of
claims 1 through 3 and 15 through 19, all of the claims pending
in the present application. Claims 4 through 14 have been
withdrawn from consideration as being directed to a non-elected
invention.
The invention relates to a ferroelectric thin film structure
for use in non-volatile random access memory. In particular,
Appellants disclose on pages 3 and 4 of the specification that
the invention provides multilayers of alternating zirconate
titanate (PZT) and pure PbTiO3 (PT) and these alternating layers
of PZT and PT overcome the prior art problems. The PZT layers
provide low switching fields and the PT layers provide the
maximum signal available by providing a large spontaneous
polarization. On pages 7-9 of the specification, Appellants
disclose that Figure 4 illustrates the ferroelectric thin film
structure having a substrate S and alternating layers of PZT and
PT.
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