Appeal No. 95-2138
Application 07/852,078
Appellants= invention and that Appellants= invention is directed
to a new structure of ferroelectric thin films.
The question before us now is whether Appellants have
provided an enabling disclosure to make the claimed ferroelectric
thin film structure. On pages 7 through 11 of the specification,
Appellants disclose a preferred embodiment of the present
invention in which the modulated ferroelectric thin film
structure, shown in Figure 4 is fabricated by ablating bulk PZT
and PT ceramics or powders. In particular, Appellants disclose
the formation of the modulated ferroelectric thin film structure
from individual PbO (P), ZrO2 (Z) and TiO2 (T) pellets. The
individual pellets are ablated by the laser beam 26 in the order
schematically illustrated in Figure 5(a). Figure 5(b)
illustrates another preferred deposition sequence in which each
PZT layer may be formed by depositing a Z layer, then a T layer
and then a P layer. The PT layer is formed by depositing a P
layer and then a T layer. After a careful review of Appellants=
specification, drawings and claims, we find that Appellants have
disclosed their claimed invention in a manner that would have
enabled one of ordinary skill in the art to make and use the
invention without undue experimentation.
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