Appeal No. 95-4159
Application 08/151,055
This is a decision on the appeal under 35 U.S.C. § 134
from the examiner's rejection of claims 1-3, 6 and 7. Claims
4 and 5 stand withdrawn from consideration by the examiner as
being directed to a nonelected invention.
The claimed invention pertains to the structure of a
semiconductor element, particularly an insulated gate bipolar
transistor (IGBT).
Representative claim 1 is reproduced as follows:
1. A semiconductor element, comprising:
a substrate of first conductivity type having an
impurity concentration of not less than 4.0 x 10¹³/cm³, said
substrate being produced from a single silicon crystal
prepared by a zone melting method and substantially free of
lifetime killers;
a first diffused region of second conductivity
type in a first surface of the substrate;
a second diffused region of first conductivity
type in the first region such that a channel region is formed
between the second region and the substrate through the first
region;
an insulating film on the first surface of the
substrate over the channel region;
a gate electrode on the insulating film;
a source electrode on the first surface of the
substrate in contact with the first and second regions;
2
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