Ex parte IWAMURO - Page 2

          Appeal No. 95-4159                                                          
          Application 08/151,055                                                      

          This is a decision on the appeal under 35 U.S.C. § 134                      
          from the examiner's rejection of claims 1-3, 6 and 7.  Claims               
          4 and 5 stand withdrawn from consideration by the examiner as               
          being directed to a nonelected invention.                                   
          The claimed invention pertains to the structure of a                        
          semiconductor element, particularly an insulated gate bipolar               
          transistor (IGBT).                                                          
          Representative claim 1 is reproduced as follows:                            
               1.  A semiconductor element, comprising:                               
               a substrate of first conductivity type having an                       
          impurity concentration of not less than 4.0 x 10¹³/cm³, said                
          substrate being produced from a single silicon crystal                      
          prepared by a zone melting method and substantially free of                 
          lifetime killers;                                                           
               a first diffused region of second conductivity                         
          type in a first surface of the substrate;                                   
               a second diffused region of first conductivity                         
          type in the first region such that a channel region is formed               
          between the second region and the substrate through the first               
               an insulating film on the first surface of the                         
          substrate over the channel region;                                          
                    a gate electrode on the insulating film;                          
                    a source electrode on the first surface of the                    
          substrate in contact with the first and second regions;                     


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