Appeal No. 95-4159
Application 08/151,055
a third diffused region of second conductivity
type formed in an opposite second surface of the substrate and
having a depth of at least 2 microns; and
a drain electrode in contact with said third
region.
The examiner relies on the following references:
Fay et al. (Fay) 5,237,183 Aug. 17, 1993
(filed Dec. 14,
1989)
T. Laska et al. (Laska), “A 2000 V-Non-Punch-Through-IGBT with
Dynamical Properties like a 1000 V-IGBT,” International
Electron Devices Meeting, December 9-12, 1990, pages 32.6.1-
32.6.4.
Claims 1-3, 6 and 7 stand rejected under 35 U.S.C. §
103. As evidence of obviousness the examiner offers Fay in
view of Laska.
Rather than repeat the arguments of appellant or the
examiner, we make reference to the brief and the answer for
the respective details thereof.
OPINION
We have carefully considered the subject matter on
appeal, the rejection advanced by the examiner and the
evidence of obviousness relied upon by the examiner as support
for the rejection. We have, likewise, reviewed and taken into
consideration, in reaching our decision, the appellant’s
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