Appeal No. 94-2080
Application 07/982,068
canceled. No claim has been allowed.
References relied on by the Examiner
Castrucci et al. (Castrucci) 3,785,886 Jan. 15, 1974
Wickstrom 4,070,690 Jan. 24, 1978
Imaizumi et al. (Imaizumi) 4,278,987 Jul. 14, 1981
The Rejections on Appeal
Claims 7-11 stand finally rejected under 35 U.S.C. § 112,
first paragraph, as being without written description in the
specification.
Claims 7-11 stand finally rejected under 35 U.S.C. § 103 as
being unpatentable over Wickstrom, Imaizumi, and Castrucci.
The Invention
The invention is directed to a vertically oriented insulated
gate field effect transistor formed on a semiconductor substrate
having a (100) principal plane. A rectangular recess is formed
such that at least two side walls thereof make a 45 degree angle
against the (01ù) plane of the substrate. Claim 10 appears the
broadest and is reproduced below:
10. A power vertical insulated gate FET comprising:
a silicon substrate of high concentration n-type
conductivity having a principal (100) plane,
an epitaxially grown lower concentration n-type
epitaxial layer on said substrate,
2
Page: Previous 1 2 3 4 5 6 7 8 9 10 11 12 13 Next
Last modified: November 3, 2007