Appeal No. 94-2080
Application 07/982,068
a p-type layer formed on said epitaxially grown
n-type layer,
a high concentration n-type top layer formed on
said p-type layer,
a rectangular parallelepiped-shaped recess formed
in such a direction that its side walls make an
angle of 45 against the (Olù) plane of saido
substrate and in a manner that said side walls are
vertical to the (100) plane of said substrate and
further in a manner to penetrate to the p-type
layer and to reach the epitaxial layer from said
top layer,
an oxide film formed in said recess and on said
top layer,
an electrode opening formed at a part of said
oxide film on said top layer,
a gate electrode formed on a part of said oxide
film formed in said recess,
a source electrode of aluminum formed at said
electrode opening, and
a drain electrode formed on said substrate.
Independent claims 7 and 11 further specify that first and
second sidewalls of the recess are formed along (010) and (001)
planes. Claim 7 additionally requires that a high concentration
region is formed in at least one of the four corner parts of the
rectangular recess. Claims 8 and 9 each depend from claim 7.
Opinion
3
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