Appeal No. 95-3637
Application 07/968,736
voltage generating means for generating a predetermined
program voltage;
voltage steering means for directing said program voltage
along predetermined program paths in said circuit; and a
memory array comprising;
a set of dual-gate field effect transistor memory cells,
each dual-gate transistor comprising a select gate, a control
gate and a floating gate disposed above a channel and between
said common source and a drain, said select gate being
separated vertically from said channel by a gate oxide, said
floating gate being separated vertically from said channel by
a tunnel oxide and said control gate being separated
vertically from said floating gate by a second layer of
insulator, characterized in that;
said select and floating gates are each formed from
polysilicon sidewalls having a vertical side and are separated
horizontally by a thin vertical insulating member adjacent
said vertical side of said select and floating gates.
Opinion
We sustain the rejection of claims 1, 3, 9, 11, 13 and
15, but not the rejection of claims 2, 4, 10, 12 and 14.
Our opinion is based only on the arguments presented by
the appellants in their briefs. Arguments not raised in the
briefs are not before us, are not at issue, and are considered
waived.
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Last modified: November 3, 2007